Harnessing defects for high-performance MoS2 tunneling field-effect transistors

Autor:	Juan Lyu, Jian Gong, HuangLong Li
Jazyk:	angličtina
Rok vydání:	2023
Předmět:	Tunneling field-effect transistors mid-gap states resonant tunneling on-state current subthreshold swing Materials of engineering and construction. Mechanics of materials TA401-492
Zdroj:	Materials Research Letters, Vol 11, Iss 4, Pp 266-273 (2023)
Druh dokumentu:	article
ISSN:	21663831 2166-3831
DOI:	10.1080/21663831.2022.2145921
Popis:	ABSTRACTThe two-dimensional (2D) materials-based tunneling field-effect transistors (TFETs) suffer from low driving currents. In contrast to the prevailing wisdom that defects are detrimental, we proposed to harness the ubiquitous defects in MoS2 to overcome the problem of the low on-state current in TFET. The existence of certain molybdenum-related vacancies and sulfur vacancy in appropriate positions confers the higher driving currents without compromising the low-power benefits. Such performance enhancements are related to the defect-assisted resonant Zener tunneling mechanism introduced by the mid-gap states of the vacancy defects. These unveiled hidden defect benefits could provide new opportunities for boosting the performance of 2D TFETs.
Databáze:	Directory of Open Access Journals
Externí odkaz:	https://doaj.org/article/ac3cf084c583460c87fa2dc53843bbd8 Zobrazit plný text záznamu View record in DOAJ