| Autor: |
Minglei Tang, Guodong Wang, Songhao Wu, Yang Xiang |
| Jazyk: |
angličtina |
| Rok vydání: |
2023 |
| Předmět: |
|
| Zdroj: |
Crystals, Vol 13, Iss 6, p 898 (2023) |
| Druh dokumentu: |
article |
| ISSN: |
2073-4352 |
| DOI: |
10.3390/cryst13060898 |
| Popis: |
In this work, we prepared ultra-long Si-doped β-Ga2O3 nanowires on annealed Al2O3-film/Si substrate by low-pressure chemical vapor deposition (LPCVD) assisted by Au as catalyst. The length of nanowires exceeds 300 μm and diameters range from ~30 to ~100 nm in one-dimensional structures. The nanowires show good crystal quality and exhibit (201) orientation, confirmed by transmission electron microscopy and X-ray diffraction analysis. The PL spectrum obtained from these β-Ga2O3 nanowires has three obvious blue luminescence peaks at 398 nm (3.12 eV), 440 nm (2.82 eV), and 492 nm (2.51 eV). The electrical properties obtained from Si-doped β-Ga2O3 nanowires exhibit good conductivity. A metal-semiconductor-metal device is made by using Ti/Au as the electrode, and the device current reaches 200 pA at a bias voltage of 3 V. Our results show that ultra-long Si-doped β-Ga2O3 nanowires can be grown directly on the surface of Al2O3-film/Si substrates. These nanowires have a very high length-diameter ratio and good electrical properties. A possible mechanism for Si doping is also presented. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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