| Autor: |
Jannatul Susoma, Jouko Lahtinen, Maria Kim, Juha Riikonen, Harri Lipsanen |
| Jazyk: |
angličtina |
| Rok vydání: |
2017 |
| Předmět: |
|
| Zdroj: |
AIP Advances, Vol 7, Iss 1, Pp 015014-015014-8 (2017) |
| Druh dokumentu: |
article |
| ISSN: |
2158-3226 |
| DOI: |
10.1063/1.4973918 |
| Popis: |
We have established Raman fingerprint of GaTe and GaSe to investigate their crystal quality. As unencapsulated, they both oxidise in ambient conditions which can be detected in their Raman analysis. X-ray photoelectron spectroscopy (XPS) analysis shows a good agreement with Raman analysis. 50-nm-thick Al2O3 encapsulation layer deposited by atomic layer deposition (ALD) inhibits degradation in ambient conditions. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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