| Autor: |
Grechkina Margarita V., Bormontov Eugene N. |
| Jazyk: |
English<br />Russian |
| Rok vydání: |
2017 |
| Předmět: |
|
| Zdroj: |
Конденсированные среды и межфазные границы, Vol 19, Iss 1, Pp 113-139 (2017) |
| Druh dokumentu: |
article |
| ISSN: |
1606-867X |
| DOI: |
10.17308/kcmf.2017.19/185 |
| Popis: |
By the method of scanning force microscopy in contact mode has been studied the change of surface topology and surface properties of single-crystal germanium (111), doped with antimony. The samples were exposed to weak pulsed magneticelds. 72 hours after brief exposure to a pulsed magnetic eld was discovered by restructuring the surface with the formation of new types of structures. The formation of structures on the surface was accompanied by a change of roughness. Minimum roughness value was observed after 144 hours after treatment. Through hours 312 the value of the roughness increased to a value close to the original. The change of microhardness Ge after exposure to pulsed magnetic elds were carried oscillatory character and was reduced to the minimum value through 168 hours after the start of the experiment. By plasma etching after exposure to the magnetic eld of the identined defective-deformation structure on the surface and in the bulk of the crystal. Revealed the formation of nanoclusters in the near surface region, the maximum number of which have been revealed by deep etching to 500 nm. The analysis of the size of discovered clusters and the dynamics of reducing the size to a minimum over time. The method of the spreading resistance was investigated by surface conductivity of nanostructured Ge. It is shown that the nanoclusters formed have a dielectric nature. The influence of weak magneticeld on structure of semiconductors with subsequent plasmachemical etching can be used to create a dielectric clusters in a semiconducting in the matrix. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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