Autor: |
Qianqian Meng, Hong Wang, Chongyang Liu, Xin Guo, Jianjun Gao, Kian Siong Ang |
Jazyk: |
angličtina |
Rok vydání: |
2017 |
Předmět: |
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Zdroj: |
IEEE Journal of the Electron Devices Society, Vol 5, Iss 1, Pp 40-44 (2017) |
Druh dokumentu: |
article |
ISSN: |
2168-6734 |
DOI: |
10.1109/JEDS.2016.2623815 |
Popis: |
In this paper, top-illuminated InP-based uni-traveling-carrier photodiodes (UTC-PDs) with dipole-doped structure which achieve both high speed and high responsivity simultaneously have been reported. With optimization of device size and layer structure, dipole-doped UTC-PDs have demonstrated a measured optical-to-electrical 3-dB bandwidth of over 40 GHz and a maximum responsivity of 0.6 A/W at optical input power of 100 mW. By using a semi-analytical equivalent circuit model, the 3-dB bandwidth was predicted to be 103 GHz. This high 3-dB bandwidth and responsivity yield a high figure-of-merit value of 61.8 A/W·GHz. |
Databáze: |
Directory of Open Access Journals |
Externí odkaz: |
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