| Autor: |
Shaolin Zhou, Kezhou Li, Yihan Chen, Shaowei Liao, Honglin Zhang, Mansun Chan |
| Jazyk: |
angličtina |
| Rok vydání: |
2019 |
| Předmět: |
|
| Zdroj: |
IEEE Journal of the Electron Devices Society, Vol 7, Pp 1072-1079 (2019) |
| Druh dokumentu: |
article |
| ISSN: |
2168-6734 |
| DOI: |
10.1109/JEDS.2019.2948254 |
| Popis: |
To reduce the reset voltage and thus leakage current of the cross-point architecture of phase change memory (PCM), a type of 1S1R cell hierarchy with reconfigured electrode capping around the phase change material is explored in this paper. The electro-thermal behavior during the RESET phase transition is mimicked using a finite element model. Results indicate that the temperature distribution, potential drop and current density across the active region can be reshaped. Especially, the process of temperature evolution for phase transition is accelerated and thus the PCM cell can be reset under a lower voltage, e.g., from 2.2 V to 1.2 V for our typical configuration with a GST width of 40 nm and heater width of 20 nm. As a result, the lower RESET voltage decreases the leakage current and power consumption, potentially leading to an increased integration level for cross-point PCM. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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