Autor: |
Ian Chuang, Aron Michael, Chee Yee Kwok |
Jazyk: |
angličtina |
Rok vydání: |
2017 |
Předmět: |
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Zdroj: |
Proceedings, Vol 1, Iss 4, p 354 (2017) |
Druh dokumentu: |
article |
ISSN: |
2504-3900 |
DOI: |
10.3390/proceedings1040354 |
Popis: |
This paper reports on polysilicon piezo-resistors that are fabricated at a low thermal budget using aluminium-induced-crystallization (AIC) of ultra-high-vacuum e-beam evaporated silicon films. By in-situ phosphorus doping of precursor amorphous silicon films e-beam evaporated at room temperature on aluminium layer, we are able to increase and control the gauge factor of the polysilicon films formed by AIC at 450 °C. Piezo-resistors made from the polysilicon films are integrated on microcantilever beams to measure their gauge factors. Gauge factors as high as 62 is obtained for 2 × 1018/cm3 phosphorus doping level in the precursor amorphous silicon film. The measured gauge factors are significantly higher than previously reported values for polysilicon films. |
Databáze: |
Directory of Open Access Journals |
Externí odkaz: |
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