| Autor: |
Alexander Grebenchukov, Olga Boytsova, Alexey Shakhmin, Artem Tatarenko, Olga Makarevich, Ilya Roslyakov, Grigory Kropotov, Mikhail Khodzitsky |
| Jazyk: |
angličtina |
| Rok vydání: |
2023 |
| Předmět: |
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| Zdroj: |
Ceramics, Vol 6, Iss 2, Pp 1291-1301 (2023) |
| Druh dokumentu: |
article |
| ISSN: |
2571-6131 |
| DOI: |
10.3390/ceramics6020079 |
| Popis: |
This work reports the effect of tin (Sn) doping on the infrared (IR) and terahertz (THz) properties of vanadium dioxide (VO2) films. The films were grown by hydrothermal synthesis with a post-annealing process and then fully characterized by X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM), and temperature-controlled electrical resistivity as well as IR and THz spectroscopy techniques. Utilizing (NH4)2SnF6 as a Sn precursor allows the preparation of homogeneous Sn-doped VO2 films. Doping of VO2 films with Sn led to an increase in the thermal hysteresis width while conserving the high modulation depth in the mid-IR regime, which would be beneficial for the applications of VO2 films in IR memory devices. A further analysis shows that Sn doping of VO2 films significantly affects the temperature-dependent THz optical properties, in particular leading to the suppression of the temperature-driven THz transmission modulation. These results indicate Sn-doped VO2 films as a promising material for the development of switchable IR/THz dichroic components. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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