| Autor: |
Chaudhry Muhammad Furqan, Muhammad Umair Khan, Muhammad Awais, Fulong Jiang, Jinho Bae, Arshad Hassan, Hoi-Sing Kwok |
| Jazyk: |
angličtina |
| Rok vydání: |
2021 |
| Předmět: |
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| Zdroj: |
Scientific Reports, Vol 11, Iss 1, Pp 1-14 (2021) |
| Druh dokumentu: |
article |
| ISSN: |
2045-2322 |
| DOI: |
10.1038/s41598-021-89956-0 |
| Popis: |
Abstract Gallium Nitride (GaN) remarkably shows high electron mobility, wide energy band gap, biocompatibility, and chemical stability. Wurtzite structure makes topmost Gallium atoms electropositive, hence high ligand binding ability especially to anions, making it usable as humidity sensor due to water self-ionization phenomenon. In this work, thin-film GaN based humidity sensor is fabricated through pulse modulated DC magnetron sputtering. Interdigitated electrodes (IDEs) with 100 μm width and spacing were inkjet printed on top of GaN sensing layer to further enhance sensor sensitivity. Impedance, capacitance, and current response were recorded for humidity and bio-sensing applications. The sensor shows approximate linear impedance response between 0 and 100% humidity range, the sensitivity of 8.53 nF/RH% and 79 kΩ/RH% for capacitance and impedance, and fast response (Tres) and recovery (Trec) time of 3.5 s and 9 s, respectively. The sensor shows little hysteresis of |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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