Enhanced Responsivity of Photodetectors Realized via Impact Ionization
| Autor: | De-Zhen Shen, Shuang-Peng Wang, Xiu-Hua Xie, Qian Qiao, Ji Yu, Chong-Xin Shan, Zhen-Zhong Zhang |
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| Jazyk: | angličtina |
| Rok vydání: | 2012 |
| Předmět: | |
| Zdroj: | Sensors, Vol 12, Iss 2, Pp 1280-1287 (2012) |
| Druh dokumentu: | article |
| ISSN: | 1424-8220 39338630 |
| DOI: | 10.3390/s120201280 |
| Popis: | To increase the responsivity is one of the vital issues for a photodetector. By employing ZnO as a representative material of ultraviolet photodetectors and Si as a representative material of visible photodetectors, an impact ionization process, in which additional carriers can be generated in an insulating layer at a relatively large electric field, has been employed to increase the responsivity of a semiconductor photodetector. It is found that the responsivity of the photodetectors can be enhanced by tens of times via this impact ionization process. The results reported in this paper provide a general route to enhance the responsivity of a photodetector, thus may represent a step towards high-performance photodetectors. |
| Databáze: | Directory of Open Access Journals |
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