| Autor: |
Yuanwei Jiang, Shuangying Cao, Linfeng Lu, Guanlin Du, Yinyue Lin, Jilei Wang, Liyou Yang, Wenqing Zhu, Dongdong Li |
| Jazyk: |
angličtina |
| Rok vydání: |
2021 |
| Předmět: |
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| Zdroj: |
Nanoscale Research Letters, Vol 16, Iss 1, Pp 1-11 (2021) |
| Druh dokumentu: |
article |
| ISSN: |
1556-276X |
| DOI: |
10.1186/s11671-021-03544-9 |
| Popis: |
Abstract Owing to its large work function, MoOX has been widely used for hole-selective contact in both thin film and crystalline silicon solar cells. In this work, thermally evaporated MoOX films are employed on the rear sides of p-type crystalline silicon (p-Si) solar cells, where the optical and electronic properties of the MoOX films as well as the corresponding device performances are investigated as a function of post-annealing treatment. The MoOX film annealed at 100 °C shows the highest work function and proves the best hole selectivity based on the results of energy band simulation and contact resistivity measurements. The full rear p-Si/MoOX/Ag-contacted solar cells demonstrate the best performance with an efficiency of 19.19%, which is the result of the combined influence of MoOX’s hole selectivity and passivation ability. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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