| Autor: |
Archana C M, Bhaskar Awadhiya, Yashwanth Nanjappa |
| Jazyk: |
angličtina |
| Rok vydání: |
2024 |
| Předmět: |
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| Zdroj: |
Journal of Physics Communications, Vol 8, Iss 8, p 085003 (2024) |
| Druh dokumentu: |
article |
| ISSN: |
2399-6528 |
| DOI: |
10.1088/2399-6528/ad6db8 |
| Popis: |
This paper investigates the ferroelectric-dielectric heterostructure with a fixed dielectric oxide and different ferroelectric oxides. This study is focused on the enhancement of capacitance, voltage amplification, and negative capacitance stabilization. In the first section of this study, an isolated ferroelectric capacitor with intrinsically unstable negative capacitance is examined for different ferroelectric oxides. To address the concern of instability a dielectric oxide is added in series to the ferroelectric capacitors. This addition raises the heterostructure’s total capacitance while stabilizing the negative capacitance. Silicon (Si), Zirconium (Zr), Aluminum (Al), and Strontium (Sr) doped hafnium oxide are used in heterostructure. It is found that the capacitance of Sr doped hafnium oxide is closely matched with the dielectric capacitance, therefore it provides the highest voltage amplification and enhanced capacitance among the other ferroelectric oxide considered. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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