Autor: |
F. de Moure-Flores, J. G. Quiñones-Galván, A. Guillén-Cervantes, J. Santoyo-Salazar, A. Hernández-Hernández, M. de la L. Olvera, M. Zapata-Torres, M. Meléndez-Lira |
Jazyk: |
angličtina |
Rok vydání: |
2012 |
Předmět: |
|
Zdroj: |
AIP Advances, Vol 2, Iss 2, Pp 022131-022131-6 (2012) |
Druh dokumentu: |
article |
ISSN: |
2158-3226 |
DOI: |
10.1063/1.4721275 |
Popis: |
Cu-doped CdTe thin films were prepared by pulsed laser deposition on Corning glass substrates using powders as target. Films were deposited at substrate temperatures ranging from 100 to 300 °C. The X-ray diffraction shows that both the Cu-doping and the increase in the substrate temperature promote the presence of the hexagonal CdTe phase. For a substrate temperature of 300 °C a CdTe:Cu film with hexagonal phase was obtained. Raman and EDS analysis indicate that the films grew with an excess of Te, which indicates that CdTe:Cu films have p-type conductivity. |
Databáze: |
Directory of Open Access Journals |
Externí odkaz: |
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