| Autor: |
Y.-J. Lee, C.-Y. Chang, Y.-H. Chou, I-Y. Tarn, J. Y.-C. Yaung, J.-H. Tarng, S.-J. Chung |
| Jazyk: |
angličtina |
| Rok vydání: |
2018 |
| Předmět: |
|
| Zdroj: |
Advanced Electromagnetics, Vol 7, Iss 5, Pp 124-130 (2018) |
| Druh dokumentu: |
article |
| ISSN: |
2119-0275 |
| DOI: |
10.7716/aem.v7i5.917 |
| Popis: |
An X-band high-power amplifier (HPA) based on gallium nitride (GaN) high electron mobility transistors (HEMTs) has been developed for synthetic aperture radar (SAR) applications. A hybrid power combining technique, including microstrip circuits and waveguides, is used to design the HPA. For reducing the size, four 50 W GaN HEMTs cascaded with one 1-to-4 power divider and one 4-to-1 power combiner form a 4-way power combined PCB circuits. For combing the high power and driving an antenna, two PCB circuits are combined by magic-T waveguides. The transmission efficiency of the power combining is approximately 80%. In the 10% duty cycle (pulse width 100 us), the output power of the HPA is over 200 W across the band of 9.5–9.8 GHz. The maximum output power is 230 W at 9.5 GHz, and the power gain is 8.3 dB at 46.1°C. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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