| Autor: |
Yodgorova D. M., Karimov A. V., Giyasova F. A., Saidova R. A. |
| Jazyk: |
English<br />Russian |
| Rok vydání: |
2008 |
| Předmět: |
|
| Zdroj: |
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, Iss 3, Pp 46-49 (2008) |
| Druh dokumentu: |
article |
| ISSN: |
2225-5818 |
| Popis: |
The photo-electric characteristics created two-side-sensitive two-base Ag–N0Al0,2Ga0,8As–n+GaAs–n0Ga0,9In0,1As–Au-structure in photodiode and photovoltaic modes are investigated at influence by radiation from own area of absorption of base areas. The received structures are of interest as silent photoreceivers for opto- and microelectronics. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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