Performance analysis of serial and shunt microwave switches designed with p-i-n diodes of different semiconductor materials
| Autor: | Gabriela Leija Hernández, José Luis López Bonilla, Luis Alejandro Iturri Hinojosa |
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| Jazyk: | angličtina |
| Rok vydání: | 2013 |
| Předmět: | |
| Zdroj: | Revista Facultad de Ingeniería Universidad de Antioquia, Iss 58 (2013) |
| Druh dokumentu: | article |
| ISSN: | 0120-6230 2422-2844 |
| DOI: | 10.17533/udea.redin.14613 |
| Popis: | A performance analysis of serial and shunt microwave switches based on p-i-n diodes of different semiconductor materials is presented. The materials analyzed are Si, GaAs, SiC, GaN, InP and GaSb. The serial type microwave switch designed with GaSb, GaAs, Si and GaN-ZB p-i-n diodes reach the lowest values of insertion losses compared to other materials. A 0.2dB inser-tion loss difference is perceived between GaSb and SiC6H p-i-n diodes. The optimal results of isolation for frequencies less than 10GHz is obtained with switches designed with SiC and GaN p-i-n diodes. The shunt type switches designed with GaN p-i-n diodes reach the lowest values of insertion losses compared to other materials. Approximately 0.2 dB insertion loss differences between the responses of GaN and Si pin diodes in the frequency of 40 GHz and a difference of 0.4 dB at 60 GHz frequency were identifi ed. GaN p-i-ndiodes are most recommendable for the design of shunt switch devices. |
| Databáze: | Directory of Open Access Journals |
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