| Autor: |
Ortolani M., Di Gaspare A., Giovine E., Evangelisti F., Foglietti V., Doria A., Gallerano G. P., Giovenale E., Messina G., Spassovsky I., Lanzieri C., Peroni M., Cetronio A. |
| Jazyk: |
angličtina |
| Rok vydání: |
2009 |
| Předmět: |
|
| Zdroj: |
Journal of the European Optical Society-Rapid Publications, Vol 4, p 09006 (2009) |
| Druh dokumentu: |
article |
| ISSN: |
1990-2573 |
| DOI: |
10.2971/jeos.2009.09006 |
| Popis: |
We used AlGaN/GaN high electron mobility transistors as room-temperature direct detectors of radiation at 0.15 THz from a free electron laser, hence 5 times higher than their cutoff frequency of 30 GHz. By near-field active mapping we investigated the antenna-like coupling of the radiation to the transistor channel. We formulate a model for the detection based on self-mixing in the transistor channel. The noise equivalent power is found in the range of 10−7 W/Hz0.5 without any optimization of the device responsivity. Present day AlGaN/GaN fabrication technology may provide operation at higher frequency, integration of amplifiers for improved responsivity and fast switches for multiplexing, which make the detector here described the basic element of a monolithic terahertz focal plane array. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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