| Autor: |
Masahiro Teraoka, Yuzuki Ono, Hojun Im |
| Jazyk: |
angličtina |
| Rok vydání: |
2023 |
| Předmět: |
|
| Zdroj: |
Materials Research Express, Vol 10, Iss 8, p 085602 (2023) |
| Druh dokumentu: |
article |
| ISSN: |
2053-1591 |
| DOI: |
10.1088/2053-1591/acf09c |
| Popis: |
We have demonstrated a simple and accurate method for characterizing the capacitance of Graphene/n-Si Schottky junction solar cells (GSSCs) which embed the metal-oxide-semiconductor (MOS) capacitor. We measured two types of GSSCs, one with thermal annealing treatments (w-a) and one without (wo-a). It was found that the wo-a GSSC exhibits a two-step feature in the phase versus forward bias voltage relationship, which may be attributed to the presence of polymethyl methacrylate residues. By considering the capacitance of the MOS capacitor (C _mos ) and its standard deviation, we successfully obtained the capacitance of the Schottky junction (C _Sch ), and evaluated meaningful built-in potentials (Schottky barrier heights) which are 0.51 V (0.78 eV) and 0.47 V (0.75 eV) for the w-a and wo-a GSSCs, respectively, by the Mott–Schottky analysis. We also briefly discuss the relationship between C _Sch and the Nyquist and Bode plots, finding that the RC time constant decreases due to the subtraction of C _mos . |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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