| Autor: |
Pushkar Srivastava, R. K. Sharma, R. K. Gupta, Firat Kacar, Rajeev Kumar Ranjan |
| Jazyk: |
angličtina |
| Rok vydání: |
2024 |
| Předmět: |
|
| Zdroj: |
IEEE Access, Vol 12, Pp 9195-9205 (2024) |
| Druh dokumentu: |
article |
| ISSN: |
2169-3536 |
| DOI: |
10.1109/ACCESS.2023.3344311 |
| Popis: |
A new proposition of passive (no external DC bias) memristor emulator (MRE) utilizing DTMOS technique which consists of four MOSFETs and a capacitor has been presented. The proposed MRE exhibits high operating frequency $(\sim 500~\mathrm {MHz})$ , zero static power and shows incremental behavior. The conventional mathematical equation of MRE has been derived considering the second-order effects of all the MOSFETs utilized. The proposed circuit has been simulated by the Cadence Virtuoso (IC617) spectre tool using $180 \mathrm {~nm}$ technology parameters. The layout occupies $1305 \mu \mathrm {m}^{2}$ area. The experimental verification has been carried out utilizing ALD1116 and ALD1117 dual N-channel and P-channel MOSFET arrays to demonstrate the practical viability. Finally, different possible applications namely; analog filters, oscillators (simple and chaotic), Schmitt trigger, Amoeba learning have been realized using proposed MRE to show its neuromorphic capability. Also, new logical AND & OR and NOT circuit configurations have been designed using proposed MRE. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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