Implied J-V Curves Recorded at Elevated Temperatures Using Light Controlled Heating
| Autor: | Gergely Havasi, Dávid Krisztián, Ferenc Korsós, Shaoyong Fu |
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| Jazyk: | angličtina |
| Rok vydání: | 2024 |
| Předmět: | |
| Zdroj: | SiliconPV Conference Proceedings, Vol 2 (2024) |
| Druh dokumentu: | article |
| ISSN: | 2940-2123 05789842 |
| DOI: | 10.52825/siliconpv.v2i.1336 |
| Popis: | The carrier lifetime characterization of solar cells is typically performed at room temperature, although the operational temperature of a solar panels can reach 60 °C. We realized a setup for laser controlled photoconductance decay (PCD) measurement at elevated temperatures induced by light. We investigated precursor p-PERC cells from multiple parts of the same ingot using this technique. From the injection level dependent carrier lifetime results the implied current-voltage characteristics are evaluated as well. We observed a relatively small but noticeable increase of the carrier lifetime up to 30% with increasing the temperature from 30°C to 60°C in all samples. Saturation current values obtained using the Kane-Swanson method indicate, that not only the bulk lifetime improves but the surface recombination rate weakens. Temperature coefficient values of the implied cell efficiency are around -0.35 rel%/°C and slightly below which agrees with typical results of electrical tests. However, due to the minor increase of the carrier lifetime, this is still a bit above the value one can obtain theoretically considering purely the known decrease of the open circuit voltage caused by the increased intrinsic charge carrier concentration at higher temperatures. |
| Databáze: | Directory of Open Access Journals |
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