| Autor: |
M. Agrawal, L. Ravikiran, N. Dharmarasu, K. Radhakrishnan, G. S. Karthikeyan, Y. Zheng |
| Jazyk: |
angličtina |
| Rok vydání: |
2017 |
| Předmět: |
|
| Zdroj: |
AIP Advances, Vol 7, Iss 1, Pp 015022-015022-11 (2017) |
| Druh dokumentu: |
article |
| ISSN: |
2158-3226 |
| DOI: |
10.1063/1.4974074 |
| Popis: |
The stress evolution of GaN/AlN heterostructure grown on 6H-SiC substrate by plasma assisted molecular beam epitaxy (PA-MBE) has been studied. AlN nucleation layer and GaN layer were grown as a function of III/V ratio. GaN/AlN structure is found to form buried cracks when AlN is grown in the intermediate growth regime(III/V∼1)and GaN is grown under N-rich growth regime (III/V |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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