| Autor: |
B. W. Veal, J. A. Eastman |
| Jazyk: |
angličtina |
| Rok vydání: |
2017 |
| Předmět: |
|
| Zdroj: |
APL Materials, Vol 5, Iss 4, Pp 042502-042502-7 (2017) |
| Druh dokumentu: |
article |
| ISSN: |
2166-532X |
| DOI: |
10.1063/1.4977205 |
| Popis: |
Thin film In2O3/YSZ heterostructures exhibit significant increases in electrical conductance with time when small in-plane electric fields are applied. Contact resistances between the current electrodes and film and between the current electrodes and substrate are responsible for the behavior. With an in-plane electric field, different field profiles are established in the two materials, with the result that oxygen ions can be driven across the heterointerface, altering the doping of the n-type In2O3. A low frequency inductive feature observed in AC impedance spectroscopy measurements under DC bias conditions was found to be due to frequency-dependent changes in the contact resistance. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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