| Autor: |
Aishani Mazumder, Taimur Ahmed, Edwin Mayes, Sherif Abdulkader Tawfik, Salvy P. Russo, Mei Xian Low, Abhishek Ranjan, Sivacarendran Balendhran, Sumeet Walia |
| Jazyk: |
angličtina |
| Rok vydání: |
2022 |
| Předmět: |
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| Zdroj: |
Advanced Electronic Materials, Vol 8, Iss 4, Pp n/a-n/a (2022) |
| Druh dokumentu: |
article |
| ISSN: |
2199-160X |
| DOI: |
10.1002/aelm.202100999 |
| Popis: |
Abstract 2D materials are increasingly being investigated for their nonvolatile switching properties as a step toward downscaling of core electronic elements. Here, the interplay between electrochemically active silver (Ag) cations and layered indium selenide (InSe), a 2D metal monochalcogenide, is investigated to demonstrate a nonvolatile switching device. Detailed microscopic characterization supported with density functional theory calculations reveals cationic filamentary‐based nonvolatile switching mechanism of γ‐InSe in a crossplanar architecture. This is electrically driven by diffusion of Ag ions through the layered InSe stack. The InSe‐based memory cells exhibit a switching ratio of ≈103 and a memory retention of >105 s. This work opens new opportunities to enhance resistive switching performances of 2D materials for next‐generation information storage and brain inspired computation using active metal diffusion. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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