Autor: |
Hyejun Kang, Ashutosh Sharma, Jung-Hyun Lee, Jae Pil Jung |
Jazyk: |
angličtina |
Rok vydání: |
2021 |
Předmět: |
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Zdroj: |
Materials Research Express, Vol 8, Iss 1, p 016301 (2021) |
Druh dokumentu: |
article |
ISSN: |
2053-1591 |
DOI: |
10.1088/2053-1591/abd5d9 |
Popis: |
Joining technology of silicon semiconductors devices to direct bond copper (DBC) substrates in high-temperature power electronics packages is of utmost importance today. In this study, Sn–Cu solder was prepared by electroplating on a direct bonded copper (DBC) substrate. The electroplated DBC system thus prepared was TLP bonded with Si chip at 250 °C for 10 min under a vacuum atmosphere. The effect of electrical charge used for plating Sn–Cu solder, void fraction in the joint, Sn–Cu solder composition on the joining characteristics, and shear strength of the Si-DBC system were analyzed. The experimental results showed that the plating thickness increased almost linearly with plating time and electrical charge. A sound Sn–Cu solder plating thickness was obtained at 40 mA cm ^−2 , 11 C cm ^−2 , 20 min with 20 at% Cu in the deposit. Furthermore, the plated Sn–Cu solder layer transformed to Cu _6 Sn _5 and Cu _3 Sn after joining at 250 °C for 10 min. The shear bonding strength of the Si/DBC joint increased with Cu content in the Sn–Cu solder until 20 at% in the Sn–Cu interlayer. |
Databáze: |
Directory of Open Access Journals |
Externí odkaz: |
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