| Autor: |
Sung Ju Hong, Min Park, Hojin Kang, Minwoo Lee, Dae Hong Jeong, Yung Woo Park |
| Jazyk: |
angličtina |
| Rok vydání: |
2016 |
| Předmět: |
|
| Zdroj: |
AIP Advances, Vol 6, Iss 8, Pp 085320-085320-7 (2016) |
| Druh dokumentu: |
article |
| ISSN: |
2158-3226 |
| DOI: |
10.1063/1.4961990 |
| Popis: |
We report the fabrication of a patterned polymer electrolyte for a two-dimensional (2D) semiconductor, few-layer tungsten diselenide (WSe2) field-effect transistor (FET). We expose an electron-beam in a desirable region to form the patterned structure. The WSe2 FET acts as a p-type semiconductor in both bare and polymer-covered devices. We observe a highly efficient gating effect in the polymer-patterned device with independent gate control. The patterned polymer gate operates successfully in a molybdenum disulfide (MoS2) FET, indicating the potential for general applications to 2D semiconductors. The results of this study can contribute to large-scale integration and better flexibility in transition metal dichalcogenide (TMD)-based electronics. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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