| Autor: |
Fengting Li, Haojie Sun, Weijing Liu, Ruijin Hong, Chunxian Tao |
| Jazyk: |
angličtina |
| Rok vydání: |
2024 |
| Předmět: |
|
| Zdroj: |
Photonics, Vol 11, Iss 4, p 305 (2024) |
| Druh dokumentu: |
article |
| ISSN: |
2304-6732 |
| DOI: |
10.3390/photonics11040305 |
| Popis: |
The low-light-level absorption coefficient of OH-contained and H2-impregnated synthetic fused silica material in 193 nm optical lithography application is determined via a laser calorimetry measurement. The fluence and repetition rate dependences of the absorptances of the deep ultraviolet (DUV)-fused silica samples with different thickness are measured. The measured dependences are fitted to a theoretical model, taking into consideration the generation and annealing of laser irradiation induced defects. The surface absorption, the low-light-level linear absorption coefficient, as well as the nonlinear absorption coefficient of the fused silica material are accurately determined via the fitting. The low-light-level linear absorption coefficients determined via the fluence dependence and the repetition rate dependence are in good agreement, demonstrating the reliability of the measured low-light-level absorption coefficient, which is the key parameter to the determination of the internal transmission of the DUV-fused silica material used in the 193 nm optical lithography. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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