High photoresponsivity in CH3NH3PbI3-XClx perovskite vertical field effect photo transistors

Autor: Haiting Zhang, Hongwen Li, Fuguo Wang, Xiaoxian Song, Ze Xu, Dongdong Wei, Jingjing Zhang, Zijie Dai, Yunpeng Ren, Yunxia Ye, Xudong Ren, Jianquan Yao
Jazyk: angličtina
Rok vydání: 2022
Předmět:
Zdroj: Results in Optics, Vol 9, Iss , Pp 100277- (2022)
Druh dokumentu: article
ISSN: 2666-9501
DOI: 10.1016/j.rio.2022.100277
Popis: The synthesis of organic-inorganic hybrid perovskites has greatly facilitated the development of high-performance optoelectronic devices such as photovoltaics, light-emitting diodes, lasers, and photodetectors. We report a CH3NH3PbI3-xClx vertical-structure field-effect phototransistor (VFEPT) using Au/Ag NWs as transparent source electrode (TSE) and exhibiting wideband absorption in the 380 to 800 nm range. Due to the ultra-short channel (78 nm) of VFEPT, multiple circulating holes in laser-induced electron-hole pairs, thus achieving excellent photoconductivity. We further tested the photoelectric performance of VFEPT, which showed that the device had the responsivity (R) is 82.99A/W, the external quantum efficiency (EQE) is 3.3 × 104% and the specific detectivity (D*) is 1.86 × 1012 Jones at VG = -2V, VSD = −5V. When VG = 2.5 V, VSD = 5 V, R reaches 109.15 A/W, EQE reaches 3.3 × 104% and D* reaches 2.45 × 1012 Jones. Organic-inorganic hybrid perovskites provide a new approach for high-performance vertical-structured ultra-short channel perovskite photodetectors.
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