| Autor: |
Sittig Robert, Nawrath Cornelius, Kolatschek Sascha, Bauer Stephanie, Schaber Richard, Huang Jiasheng, Vijayan Ponraj, Pruy Pascal, Portalupi Simone Luca, Jetter Michael, Michler Peter |
| Jazyk: |
angličtina |
| Rok vydání: |
2022 |
| Předmět: |
|
| Zdroj: |
Nanophotonics, Vol 11, Iss 6, Pp 1109-1116 (2022) |
| Druh dokumentu: |
article |
| ISSN: |
2192-8614 |
| DOI: |
10.1515/nanoph-2021-0552 |
| Popis: |
The GaAs-based material system is well-known for hosting InAs quantum dots (QDs) with outstanding optical properties, typically emitting at a wavelength of around 900 nm. The insertion of a metamorphic buffer (MMB) can shift this emission to the technologically attractive telecom C-band range centered at 1550 nm. However, the thickness of common MMB designs (>1 μm) limits their compatibility with most photonic resonator types. Here, we report on the metal–organic vapor-phase epitaxy (MOVPE) growth of a novel InGaAs MMB with a nonlinear indium content grading profile designed to maximize plastic relaxation within minimal layer thickness. This allows us to achieve the necessary transition of the lattice constant and to provide a smooth surface for QD growth within 180 nm. Single-photon emission at 1550 nm from InAs QDs deposited on top of this thin-film MMB is demonstrated. The strength of the new design is proven by integrating it into a bullseye cavity via nano-structuring techniques. The presented advances in the epitaxial growth of QD/MMB structures form the basis for the fabrication of high-quality telecom nonclassical light sources as a key component of photonic quantum technologies. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
|
