| Autor: |
Enyuan Xie, Mark Stonehouse, Ricardo Ferreira, Jonathan J. D. McKendry, Johannes Herrnsdorf, Xiangyu He, Sujan Rajbhandari, Hyunchae Chun, Aravind V. N. Jalajakumari, Oscar Almer, Grahame Faulkner, Ian M. Watson, Erdan Gu, Robert Henderson, Dominic O'Brien, Martin D. Dawson |
| Jazyk: |
angličtina |
| Rok vydání: |
2017 |
| Předmět: |
|
| Zdroj: |
IEEE Photonics Journal, Vol 9, Iss 6, Pp 1-11 (2017) |
| Druh dokumentu: |
article |
| ISSN: |
1943-0655 |
| DOI: |
10.1109/JPHOT.2017.2768478 |
| Popis: |
We demonstrate the development, performance, and application of a GaN-based micro-light emitting diode ( $\mu$LED) array sharing a common p-electrode (anode), and with individually addressable n-electrodes (cathodes). Compared to conventional GaN-based LED arrays, this array design employs a reversed structure of common and individual electrodes, which makes it innovative and compatible with n-type metal-oxide-semiconductor (NMOS) transistor-based drivers for faster modulation. Excellent performance characteristics are illustrated by an example array emitting at 450 nm. At a current density of 17.7 kA/cm$^2$ in direct-current operation, the optical power and small signal electrical-to-optical modulation bandwidth of a single $\mu$LED element with 24 $\mu$m diameter are over 2.0 mW and 440 MHz, respectively. The optimized fabrication process also ensures a high yield of working $\mu$LED elements per array and excellent element-to-element uniformity of electrical/optical characteristics. Results on visible light communication are presented as an application of an array integrated with an NMOS driver. Data transmission at several hundred Mb/s without bit error is achieved for single- and multiple-$\mu$ LED-element operations, under an on–off-keying modulation scheme. Transmission of stepped sawtooth waveforms is also demonstrated to confirm that the $\mu$ LED elements can transmit discrete multilevel signals. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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