| Autor: |
Hisashi Kino, Takafumi Fukushima, Tetsu Tanaka |
| Jazyk: |
angličtina |
| Rok vydání: |
2020 |
| Předmět: |
|
| Zdroj: |
IEEE Journal of the Electron Devices Society, Vol 8, Pp 1266-1271 (2020) |
| Druh dokumentu: |
article |
| ISSN: |
2168-6734 |
| DOI: |
10.1109/JEDS.2020.3025336 |
| Popis: |
Spiking neural networks (SNNs) have attracted considerable attention as next-generation neural networks. As SNNs consist of devices that have spike-timing-dependent plasticity (STDP) characteristics, STDP is one of the critical characteristics we need to consider to implement an SNN. In this study, we generated the STDP of a biological synapse with non-volatile tunnel-field-effect-transistor (tunnel FET) memory that has a charge-storage layer and a tunnel FET structure. Tunnel FET is a promising structure to reduce the operation voltage owing to its steep sub-threshold slope. Therefore, the non-volatile tunnel-FET memory we propose enables the implementation of low-operation-voltage SNNs. This article reports the I-V, programming, and both symmetric and asymmetric STDP characteristics of a non-volatile tunnel-FET memory with p-channel-MOS-like operation. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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