| Autor: |
Maxime Bouschet, Ulises Zavala-Moran, Vignesh Arounassalame, Rodolphe Alchaar, Clara Bataillon, Isabelle Ribet-Mohamed, Francisco de Anda-Salazar, Jean-Philippe Perez, Nicolas Péré-Laperne, Philippe Christol |
| Jazyk: |
angličtina |
| Rok vydání: |
2021 |
| Předmět: |
|
| Zdroj: |
Photonics, Vol 8, Iss 6, p 194 (2021) |
| Druh dokumentu: |
article |
| ISSN: |
2304-6732 |
| DOI: |
10.3390/photonics8060194 |
| Popis: |
In this paper, the influence of etching depth on the dark current and photo-response of a mid-wave infrared Ga-free T2SL XBn pixel detector is investigated. Two wet chemical etching depths have been considered for the fabrication of a non-passivated individual pixel detector having a cut-off wavelength of 5 µm at 150 K. This study shows the strong influence of the lateral diffusion length of a shallow-etched pixel on the electro-optical properties of the device. The lowest dark current density was recorded for the deep-etched detector, on the order of 1 × 10−5 A/cm2 at 150 K and a bias operation equal to −400 mV. The corresponding quantum efficiency was measured at 60% (without anti-reflection coating) for a 3 µm thick absorbing layer. A comparison of experimental results obtained on the two kinds of etched pixels demonstrates the need for a deep-etching process combined with efficient passivation for FPA manufacturing. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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