| Autor: |
Paul Jacob, Pooja C. Patil, Shan Deng, Kai Ni, Khushwant Sehra, Mridula Gupta, Manoj Saxena, David MacMahon, Santosh Kurinec |
| Jazyk: |
angličtina |
| Rok vydání: |
2023 |
| Předmět: |
|
| Zdroj: |
Solids, Vol 4, Iss 4, Pp 356-367 (2023) |
| Druh dokumentu: |
article |
| ISSN: |
2673-6497 |
| DOI: |
10.3390/solids4040023 |
| Popis: |
This study investigates the electrical characteristics observed in n-channel and p-channel ferroelectric field effect transistor (FeFET) devices fabricated through a similar process flow with 10 nm of ferroelectric hafnium zirconium oxide (HZO) as the gate dielectric. The n-FeFETs demonstrate a faster complete polarization switching compared to the p-channel counterparts. Detailed and systematic investigations using TCAD simulations reveal the role of fixed charges and interface traps at the HZO-interfacial layer (HZO/IL) interface in modulating the subthreshold characteristics of the devices. A characteristic crossover point observed in the transfer characteristics of n-channel devices is attributed with the temporary switching between ferroelectric-based operation to charge-based operation, caused by the pinning effect due to the presence of different traps. This experimental study helps understand the role of charge trapping effects in switching characteristics of n- and p-channel ferroelectric FETs. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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