| Autor: |
Andy eQuindeau, Dietrich eHesse, Marin eAlexe |
| Jazyk: |
angličtina |
| Rok vydání: |
2014 |
| Předmět: |
|
| Zdroj: |
Frontiers in Physics, Vol 2 (2014) |
| Druh dokumentu: |
article |
| ISSN: |
2296-424X |
| DOI: |
10.3389/fphy.2014.00007 |
| Popis: |
We report an analogously programmable memristor based on genuine electronic resistive switching combining ferroelectric switching and electron tunneling. The tunnel current through an 8 unit cell thick epitaxial Pb(Zr[0.2]Ti[0.8])O[3] film sandwiched between La[0.7]Sr[0.3]MnO[3] and cobalt electrodes obeys the Kolmogorov-Avrami-Ishibashi model for bidimensional growth with a characteristic switching time in the order of 10^-7 seconds. The analytical description of switching kinetics allows us to develop a characteristic transfer function that has only one parameter viz. the characteristic switching time and fully predicts the resistive states of this type of memristor. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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