| Autor: |
Tetiana Slusar, Jin-Cheol Cho, Bong-Jun Kim, Sun Jin Yun, Hyun-Tak Kim |
| Jazyk: |
angličtina |
| Rok vydání: |
2016 |
| Předmět: |
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| Zdroj: |
APL Materials, Vol 4, Iss 2, Pp 026101-026101-7 (2016) |
| Druh dokumentu: |
article |
| ISSN: |
2166-532X |
| DOI: |
10.1063/1.4940901 |
| Popis: |
We report the epitaxial growth and the mechanism of a higher temperature insulator-to-metal-transition (IMT) of vanadium dioxide (VO2) thin films synthesized on aluminum nitride (AlN)/Si (111) substrates by a pulsed-laser-deposition method; the IMT temperature is TIMT ≈ 350 K. X-ray diffractometer and high resolution transmission electron microscope data show that the epitaxial relationship of VO2 and AlN is VO2 (010) ‖ AlN (0001) with VO2 [101] ‖ AlN [ 2 1 ̄ 1 ̄ 0 ] zone axes, which results in a substrate-induced tensile strain along the in-plane a and c axes of the insulating monoclinic VO2. This strain stabilizes the insulating phase of VO2 and raises TIMT for 10 K higher than TIMT single crystal ≈ 340 K in a bulk VO2 single crystal. Near TIMT, a resistance change of about four orders is observed in a thick film of ∼130 nm. The VO2/AlN/Si heterostructures are promising for the development of integrated IMT-Si technology, including thermal switchers, transistors, and other applications. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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