Low temperature processed, highly stable CMOS inverter by integrating Zn-ON and tellurium thin-film transistors
| Autor: | Muhammad Naqi, Seong Cheol Jang, Yongin Cho, Ji Min Park, Joo On Oh, Hyun Yeol Rho, Hyun-Suk Kim, Sunkook Kim |
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| Jazyk: | angličtina |
| Rok vydání: | 2023 |
| Předmět: | |
| Zdroj: | Journal of Information Display, Vol 24, Iss 3, Pp 199-204 (2023) |
| Druh dokumentu: | article |
| ISSN: | 15980316 2158-1606 1598-0316 |
| DOI: | 10.1080/15980316.2023.2174195 |
| Popis: | Semiconductors processed at low temperature for complementary metal–oxide semiconductors (CMOS) devices are receiving considerable attention in the field of integrated electronic applications. In this work, we demonstrated a CMOS inverter constructed by n-type ZnON and p-type Te TFTs where all the processes have been done at low temperature. The electrical measurements of proposed TFTs exhibit high mobility (> 100 and > 3 cm2/Vs in case of ZnON and Te TFTs, respectively) and a stable on/off current ratio. The resulted CMOS inverter exhibits a high voltage swing and a high voltage gain of 15.89. Since all the synthesis and fabrication processes are performed at low temperatures with easy processing techniques, the results may open new opportunities in the field of integrated electronics field. |
| Databáze: | Directory of Open Access Journals |
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