| Autor: |
Linkui Niu, Peiran Xu, Tiantian Huang, Wanli Yang, Zhimin Chen, Xin Chen, Ning Dai |
| Jazyk: |
angličtina |
| Rok vydání: |
2024 |
| Předmět: |
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| Zdroj: |
Advanced Electronic Materials, Vol 10, Iss 9, Pp n/a-n/a (2024) |
| Druh dokumentu: |
article |
| ISSN: |
2199-160X |
| DOI: |
10.1002/aelm.202400006 |
| Popis: |
Abstract Tunable optical information storage is crucial in artificial retinal systems for mimicking neurobiological visual characteristics. The perception and storage of light signals rely heavily on the regulation of the conductivity states of memristor materials (e.g., transition metal oxides). Controlling light memristor behavior via defects and polymorphic phases remains underexplored and differs from traditional plasticity training via repeated testing. In this study, defect‐driven ultraviolet light perception and memristor storage with phase transitions in vanadium dioxide (VO2) thin films are presented. The effects of oxygen defects and the corresponding polymorphic phases on ultraviolet light memristors are investigated. The dependence of phonon vibrations and insulator–metal transition behavior on defect levels are revealed. Self‐doping and polymorphs enable VO2 to exhibit distinct ultraviolet memristor performance. It is anticipated that defect‐driven light memristors significantly contribute to the realization of artificial synaptic devices and the implementation of advanced electronic neuron systems. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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