| Autor: |
Daniel Nagy, Guillermo Indalecio, Antonio J. Garcia-Loureiro, Gabriel Espineira, Muhammad A. Elmessary, Karol Kalna, Natalia Seoane |
| Jazyk: |
angličtina |
| Rok vydání: |
2019 |
| Předmět: |
|
| Zdroj: |
IEEE Access, Vol 7, Pp 12790-12797 (2019) |
| Druh dokumentu: |
article |
| ISSN: |
2169-3536 |
| DOI: |
10.1109/ACCESS.2019.2892592 |
| Popis: |
Variability of semiconductor devices is seriously limiting their performance at nanoscale. The impact of variability can be accurately and effectively predicted by computer-aided simulations in order to aid future device designs. Quantum corrected (QC) drift-diffusion (DD) simulations are usually employed to estimate the variability of state-of-the-art non-planar devices but require meticulous calibration. More accurate simulation methods, such as QC Monte Carlo (MC), are considered time consuming and elaborate. Therefore, we predict TiN metal gate work-function granularity (MGG) and line edge roughness (LER) induced variability on a 10-nm gate length gate-all-around Si nanowire FET and perform a rigorous comparison of the QC DD and MC results. In case of the MGG, we have found that the QC DD predicted variability can have a difference of up to 20% in comparison with the QC MC predicted one. In case of the LER, we demonstrate that the QC DD can overestimate the QC MC simulation produced variability by a significant error of up to 56%. This error between the simulation methods will vary with the root mean square (RMS) height and maximum source/drain $n$ -type doping. Our results indicate that the aforementioned QC DD simulation technique yields inaccurate results for the ON-current variability. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
|
