| Autor: |
Oleg Devitsky, Igor Sysoev, Vitaliy Batishchev, Viktor Vasiliev, Ivan Kasyanov |
| Jazyk: |
ruština |
| Rok vydání: |
2022 |
| Předmět: |
|
| Zdroj: |
Вестник Северо-Кавказского федерального университета, Vol 0, Iss 5, Pp 12-17 (2022) |
| Druh dokumentu: |
article |
| ISSN: |
2307-907X |
| Popis: |
Pulsed laser deposition method was heterostructure GaP / Si. The methods of reducing the magnitude of the mechanical stresses in the resulting film, Raman scattering found that using the method of pulsed laser deposition at 300 °C for heterostructure GaP / Si is possible to reduce the value of the mechanical stresses. Installed depth dependence of occurrence p-n transition in the heterostructure GaP / Si at different temperatures of the annealing time and also obtaining optimum parameters based heterostructure solar cell GaP / Si. Investigated the use of instrumentation GaP/Si heterostructures as a silicon solar cell c wide-window GaP. It is shown that the maximum open circuit voltage obtained solar cell reaches 900 mV at a value of the external quantum efficiency of about 74,5 %. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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