Dielectric and photovoltaic properties of heterostructure SiC / Si
| Autor: | O.N. Sergeeva, A.V. Solnyshkin, S.I. Gudkov, S.A. Kukushkin, I.P. Pronin, G.M. Nekrasova |
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| Jazyk: | ruština |
| Rok vydání: | 2017 |
| Předmět: | |
| Zdroj: | Физико-химические аспекты изучения кластеров, наноструктур и наноматериалов, Iss 9, Pp 435-441 (2017) |
| Druh dokumentu: | article |
| ISSN: | 2226-4442 2658-4360 |
| DOI: | 10.26456/pcascnn/2017.9.435 |
| Popis: | The paper presents the results of a study of dielectric and photovoltaic properties of heterostructures SiC / Si with different conductivity type of silicon substrates. The stationary photovoltaic responses of the structures were observed under electromagnetic radiation in the wavelength range from 400 — 980 nm. It is shown that the phase of photovoltaic responses depends on the capacitance jump in C — V characteristics. Possible mechanisms of the photovoltaic phenomena in heterostructures SiC / Si are discussed. |
| Databáze: | Directory of Open Access Journals |
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