| Popis: |
In this paper, we present a single junction graded band gap thin film solar cell using heavily phosphorous doped amorphous silicon, intrinsic amorphous silicon and heavily boron doped amorphous silicon germanium. The first part of the work presents a rigorous analysis of J-V characteristics of recommended photovoltaic structure under short circuit (SC), open circuit (OC), dark and AM 1.5G illumination standard. Further, optimisation of thickness of active layers of the suggested n+ aSi:H/i aSi:H/p+aSiGe:H solar cell structure is done using SCAPS1D solar simulator. The active layer thickness of the proposed solar cell is 430 nm only. Low active layer thickness and absence of multiple junctions reduces the material requirement, complexity and cost of the proposed solar cell. Furthermore, fabrication of individual layers and overall summary of their characterisation have been done. Finally, the proposed structure has been fabricated and validated its J-V characteristics. The fabricated solar cell has short circuit current density (Jsc) of 11.67 mA/cm2, open circuit voltage (Voc) of 1.18 V, fill factor (FF) of 0.857 and conversion efficiency (η) of 11.80% which is on par with other announced single junction amorphous silicon solar cells. Here, we are reporting a single junction graded band gap solar cell using combination of aSi:H and aSiGe:H alloys with varying doping levels for the first time, which is better in conversion efficiency while compact and light. |
