A novel hybrid termination structure for vertical gallium nitride Schottky barrier diode by using technology computer aided design simulation

Autor:	Jian Li, Feng Lin, Yong Chen, Wei He, Xinke Liu
Jazyk:	angličtina
Rok vydání:	2021
Předmět:	Power semiconductor devices Semiconductor device modelling equivalent circuits design and testing Junction and barrier diodes Electronic engineering computing Electrical engineering. Electronics. Nuclear engineering TK1-9971
Zdroj:	Electronics Letters, Vol 57, Iss 2, Pp 83-85 (2021)
Druh dokumentu:	article
ISSN:	1350-911X 0013-5194
DOI:	10.1049/ell2.12067
Popis:	Abstract Gallium nitride based high‐power electronic devices are now in full swing. However, the phenomenon that the gallium nitride Schottky diodes break down prematurely without reaching the gallium nitride material limit is unsolved. This paper proposes a novel hybrid termination structure for vertical gallium nitride Schottky diodes to improve breakdown voltage. This work is carried out to simulate the breakdown voltage and reverse characteristics of the vertical gallium nitride Schottky diode by using technology computer aided design (TCAD) simulation. Under the same testing conditions, we demonstrate that compared with the control vertical Schottky diode, the breakdown voltage of the proposed Schottky diode can be significantly advanced, which has increased by 350 V and reached 850 V.
Databáze:	Directory of Open Access Journals
Externí odkaz:	https://doaj.org/article/32d8f67dc1ce439988b3912291ef2c80 Zobrazit plný text záznamu Plný text View record in DOAJ