| Autor: |
Takashi Ishida, Takashi Ushijima, Shosuke Nakabayashi, Kozo Kato, Takayuki Koyama, Yoshitaka Nagasato, Junji Ohara, Shinichi Hoshi, Masatake Nagaya, Kazukuni Hara, Takashi Kanemura, Masato Taki, Toshiki Yui, Keisuke Hara, Daisuke Kawaguchi, Koji Kuno, Tetsuya Osajima, Jun Kojima, Tsutomu Uesugi, Atsushi Tanaka, Chiaki Sasaoka, Shoichi Onda, Jun Suda |
| Jazyk: |
angličtina |
| Rok vydání: |
2024 |
| Předmět: |
|
| Zdroj: |
Applied Physics Express, Vol 17, Iss 2, p 026501 (2024) |
| Druh dokumentu: |
article |
| ISSN: |
1882-0786 |
| DOI: |
10.35848/1882-0786/ad269d |
| Popis: |
To address the issue of the high cost of GaN substrates, a recycling process for GaN substrates using a laser slicing technique was investigated. The channel properties of lateral MOSFETs and the reverse characteristics of vertical PN diodes, which represent the main components of vertical power devices, exhibited no degradation either before and after laser slicing or due to the overall GaN substrate recycling process. This result indicates that the proposed recycling process is an effective method for reducing the cost of GaN substrates and has the potential to encourage the popularization of GaN vertical power devices. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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