Simulation of Electrical Parameters for Ru/Ta2O5/SiO2/Si(p) High-k MOS Structure

Autor:	Juraj Racko, Ladislav Harmatha, Juraj Breza, Peter Benko, Daniel Donoval
Jazyk:	angličtina
Rok vydání:	2008
Předmět:	mos structure c-v curves sio2 semiconductor. Electrical engineering. Electronics. Nuclear engineering TK1-9971
Zdroj:	Advances in Electrical and Electronic Engineering, Vol 7, Iss 1 - 2, Pp 385-388 (2008)
Druh dokumentu:	article
ISSN:	1336-1376 1804-3119
Popis:	The contribution presents the results of simulation of direct tunnelling of free charge carriers through a thin gateinsulator in MOS structures consisting of a Ta2O5/SiO2 bilayer taking into account also indirect tunnelling of free chargecarriers through the SiO2/Si interface traps. The calculated I–V and C–V curves reveal the processes of electron and holetunnelling through the insulator-to-semiconductor potential barrier that can be divided into four classes.
Databáze:	Directory of Open Access Journals
Externí odkaz:	https://doaj.org/article/d320fc7fb5d5450b998d4338caa761b8 Zobrazit plný text záznamu View record in DOAJ