| Autor: |
Rama Murali G K, Prathmesh Deshmukh, S. S. Prabhu, Palash Kumar Basu |
| Jazyk: |
angličtina |
| Rok vydání: |
2018 |
| Předmět: |
|
| Zdroj: |
AIP Advances, Vol 8, Iss 12, Pp 125122-125122-7 (2018) |
| Druh dokumentu: |
article |
| ISSN: |
2158-3226 |
| DOI: |
10.1063/1.5063399 |
| Popis: |
A high sensitivity, low power (∼1μW to 10 μW), room temperature, antenna coupled, THz (0.8 THz) detector is presented by means field effect transistor (FETs) fabricated on epitaxial-grown graphene on silicon carbide. The contact resistance across the source and drain are made high to study the effect of THz response. It is demonstrated that the energy coupled to the antenna is the important parameter in designing the ultra-sensitive THz detectors rather than the contact resistances and channel conductivity. The realised graphene based detectors shows quite good responsivity (>535 V/W) and noise equivalent power (NEP) ( |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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