| Autor: |
Shining Xu, Shuqi Zhang, Jeremy D. Kirch, Cheng Liu, Andree Wibowo, Sudersena R. Tatavarti, Dan Botez, Luke J. Mawst |
| Jazyk: |
angličtina |
| Rok vydání: |
2023 |
| Předmět: |
|
| Zdroj: |
Photonics, Vol 10, Iss 12, p 1377 (2023) |
| Druh dokumentu: |
article |
| ISSN: |
2304-6732 |
| DOI: |
10.3390/photonics10121377 |
| Popis: |
The surface morphology of a buffer template is an important factor in the heteroepitaxial integration of optoelectronic devices with a significant lattice mismatch. In this work, InP-based long-wave infrared (~8 µm) emitting quantum cascade lasers with active region designs lattice-matched to InP were grown on GaAs and Si substrates employing InAlGaAs step-graded metamorphic buffer layers, as a means to assess the impact of surface roughness on device performance. A room-temperature pulsed-operation lasing with a relatively good device performance was obtained on a Si template, even with a large RMS roughness of 17.1 nm over 100 µm2. Such results demonstrate that intersubband-operating devices are highly tolerant to large RMS surface roughness, even in the presence of a high residual dislocation density. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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