Diverse Properties of Carbon-Substituted Silicenes

Autor: Hai Duong Pham, Shih-Yang Lin, Godfrey Gumbs, Nguyen Duy Khanh, Ming-Fa Lin
Jazyk: angličtina
Rok vydání: 2020
Předmět:
Zdroj: Frontiers in Physics, Vol 8 (2020)
Druh dokumentu: article
ISSN: 2296-424X
DOI: 10.3389/fphy.2020.561350
Popis: The theoretical framework, which is built from the first-principles results, is successfully developed for investigating emergent two-dimensional materials, as it is clearly illustrated by carbon substitution in silicene. By the delicate VASP calculations and analyses, the multi-orbital hybridizations are thoroughly identified from the optimal honeycomb lattices, the atom-dominated energy spectra, the spatial charge density distributions, and the atom and orbital-decomposed van Hove singularities, being very sensitive to the concentration and arrangements of guest atoms. All the binary two-dimensional silicon-carbon compounds belong to the finite- or zero-gap semiconductors, corresponding to the thoroughly/strongly/slightly modified Dirac-cone structures near the Fermi level. Additionally, there are frequent π and σ band crossings, but less anti-crossing behaviors. Apparently, our results indicate the well-defined π and σ bondings.
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