Ion-Driven Electrochemical Random-Access Memory-Based Synaptic Devices for Neuromorphic Computing Systems: A Mini-Review

Autor: Heebum Kang, Jongseon Seo, Hyejin Kim, Hyun Wook Kim, Eun Ryeong Hong, Nayeon Kim, Daeseok Lee, Jiyong Woo
Jazyk: angličtina
Rok vydání: 2022
Předmět:
Zdroj: Micromachines, Vol 13, Iss 3, p 453 (2022)
Druh dokumentu: article
ISSN: 2072-666X
DOI: 10.3390/mi13030453
Popis: To enhance the computing efficiency in a neuromorphic architecture, it is important to develop suitable memory devices that can emulate the role of biological synapses. More specifically, not only are multiple conductance states needed to be achieved in the memory but each state is also analogously adjusted by consecutive identical pulses. Recently, electrochemical random-access memory (ECRAM) has been dedicatedly designed to realize the desired synaptic characteristics. Electric-field-driven ion motion through various electrolytes enables the conductance of the ECRAM to be analogously modulated, resulting in a linear and symmetric response. Therefore, the aim of this study is to review recent advances in ECRAM technology from the material and device engineering perspectives. Since controllable mobile ions play an important role in achieving synaptic behavior, the prospect and challenges of ECRAM devices classified according to mobile ion species are discussed.
Databáze: Directory of Open Access Journals