| Autor: |
M. J. Ashwin, T. D. Veal, J. J. Bomphrey, I. R. Dunn, D. Walker, P. A. Thomas, T. S. Jones |
| Jazyk: |
angličtina |
| Rok vydání: |
2011 |
| Předmět: |
|
| Zdroj: |
AIP Advances, Vol 1, Iss 3, Pp 032159-032159-6 (2011) |
| Druh dokumentu: |
article |
| ISSN: |
2158-3226 |
| DOI: |
10.1063/1.3643259 |
| Popis: |
The incorporation of N in molecular-beam epitaxy of GaNxSb1−x alloys with x ⩽ 0.022 has been investigated as a function of temperature (325–400°C) and growth rate 0.25–1.6 μmh−1. At fixed growth rate, the incorporated N fraction increases as the temperature is reduced until a maximum N content for the particular growth rate reached. At each temperature, there is a range of growth rates over which the N content is inversely proportional to the growth rate; the results are understood in terms of a kinetic model. The systematic growth rate- and temperature-dependence enables the N content and resulting band gap to be controlled. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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