Performance of High Efficiency Avalanche Poly-SiGe Devices for Photo-Sensing Applications

Autor: Yuang-Tung Cheng, Tsung-Lin Lu, Shang-Husuan Wang, Jyh-Jier Ho, Chung-Cheng Chang, Chau-Chang Chou, Jiashow Ho
Jazyk: angličtina
Rok vydání: 2022
Předmět:
Zdroj: Sensors, Vol 22, Iss 3, p 1243 (2022)
Druh dokumentu: article
ISSN: 22031243
1424-8220
DOI: 10.3390/s22031243
Popis: This paper explores poly-silicon-germanium (poly-SiGe) avalanche photo-sensors (APSs) involving a device of heterojunction structures. A low pressure chemical vapor deposition (LPCVD) technique was used to deposit epitaxial poly-SiGe thin films. The thin films were subjected to annealing after the deposition. Our research shows that the most optimal thin films can be obtained at 800 °C for 30 min annealing in the hydrogen atmosphere. Under a 3-μW/cm2 incident light (with a wavelength of 550 nm) and up to 27-V biased voltage, the APS with a n+-n-p-p+ alloy/SiO2/Si-substrate structure using the better annealed poly-SiGe film process showed improved performance by nearly 70%, 96% in responsivity, and 85% in quantum efficiency, when compared to the non-annealed APS. The optimal avalanche multiplication factor curve of the APS developed under the exponent of n = 3 condition can be improved with an increase in uniformity corresponding to the APS-junction voltage. This finding is promising and can be adopted in future photo-sensing and optical communication applications.
Databáze: Directory of Open Access Journals
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