| Autor: |
Daqian Ye, Dongyan Zhang, Chaoyu Wu, Duxiang Wang, Chenke Xu, Jie Zhang, Meichun Huang |
| Jazyk: |
angličtina |
| Rok vydání: |
2017 |
| Předmět: |
|
| Zdroj: |
AIP Advances, Vol 7, Iss 5, Pp 055016-055016-6 (2017) |
| Druh dokumentu: |
article |
| ISSN: |
2158-3226 |
| DOI: |
10.1063/1.4984029 |
| Popis: |
We presented a compositionally graded hole reservoir layers(HRL) - an AlGaN/GaN super lattice hole reservoir layer with Al mole fraction multi-step gradient from high to low (GSL-HRL) in this paper. The designed LED with compositionally step graded HRL shows comparable low operating voltage and less efficiency droop. Simulation results reveal that this graded HRL could reserve the hole effectively and the hole in HRL can be energized by the strong electric field due to the polarization caused by different Al contents AlxGa1-xN layers. Such a design makes hole travel across the p-type EBL and inject into the MQWs more efficiently and smoothly. The novel structure of HRL improves the performance of the LED significantly and gives a promising application in high power GaN-based LED in the future. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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